Focus detecting device and electronic device

ABSTRACT

The present technology relates to a focus detecting device and an electronic device that can adjust the maximum value and the minimum value of sensitivity in phase detection pixels. The focus detecting device and an electronic device each include a microlens, a photoreceptor configured to receive light entering through the microlens, a light shield film provided between the microlens and the photoreceptor and configured to limit an amount of light on the photoreceptor, and a light shield wall provided vertical to the light shield film. The light shield wall or the light shield walls having a predetermined height are provided on any one or both of surfaces of the light shield film facing the photoreceptor and the microlens. The present technology can be applied to an imaging device configured to detect a focus by detection of phase difference.

TECHNICAL FIELD

The present technology relates to focus detecting devices and electronicdevices. More particularly, the present technology relates to a focusdetecting device and an electronic device that detect a focus moreaccurately.

BACKGROUND ART

Autofocus systems in digital cameras mainly include contrast system andphase difference system. The contrast system involves moving lenses toachieve focus at the highest contrast. In digital cameras, autofocus isachieved by reading a part of an image captured by an image sensor,which eliminates the need for an optical system for autofocus.

The phase difference system employs what is called triangulationtechniques for determining the distance from a subject to two differentpoints by measuring an angular difference between the subject and thetwo points. For the phase difference system, the images of light passingthrough different regions of a lens, for example, the flux of light atthe left and right sides of a lens is used. In the phase differencesystem, how long the lens needs to be moved to a focal position isachieved is determined by measuring the distance.

Image-plane phase difference autofocus performs autofocus with the phasedifference system using an image sensor. The image sensor has condensingmicrolenses. The image sensor is further provided with a diaphragm forlimiting light incident on the microlenses to give an image sensor forphase-difference autofocus (see, for example, Patent Literature 1).

CITATION LIST Patent Literature

Patent Literature 1: JP 2011-165736A

SUMMARY OF INVENTION Technical Problem

The contrast system may take a long time to obtain focus since lensesneed to be moved back and forth to detect the highest contrast. Ascompared with the contrast system, the phase difference system achieveshigh-speed autofocus since it does not require the time for movinglenses back and forth to detect focal positions.

The image-plane phase difference system, however, includes a diaphragm,(e.g., light shield film) configured to limit light incident onmicrolenses. This limits the amount of light incident on an image sensorto degrade sensitivity. That is, the image-plane phase difference systemuses, for example, the flux of light at the right and left sides of alens is used, or a part of light incident on the lens is used, so thatthe amount of light incident on an image sensor decreases to degradesensitivity.

Since the flux of light at the right and left sides is used in theimage-plane phase difference system, light passing through the rightside of the lens needs to enter a right image sensor and light passingthrough the left side of the lens needs to enter a left image sensor. Inother words, light passing through the left side of the lens iscontrolled not to enter the right image sensor, whereas light passingthrough the right side of the lens is controlled not to enter the leftimage sensor.

Patent Literature 1 describes that a reflector is used to reflectunnecessary light so that light passing through the left side of a lensis controlled not to enter a right image sensor and light passingthrough the right side of the lens is controlled not to enter a leftimage sensor. In Patent Literature 1, however, the amount of lightincident on the image sensors also decreases to degrade sensitivity.

Thus, it has been difficult to control the sensitivity of the imagesensor.

The present technology has been made in light of such circumstances toobtain a desired sensitivity.

Solution to Problem

A first focus detecting device according to an aspect of the presenttechnology includes: a microlens; a photoreceptor configured to receivelight entering through the microlens; a light shield film providedbetween the microlens and the photoreceptor and configured to limit anamount of light on the photoreceptor; and a light shield wall providedvertical to the light shield film.

The light shield wall can be provided at an opening of the light shieldfilm.

The light shield wall can be provided on a surface of the light shieldfilm facing the microlens.

The light shield wall can be provided on a surface of the light shieldfilm facing the photoreceptor.

The light shield walls can be provided on both surfaces of the lightshield film facing the microlens and the photoreceptor.

A cover area of the light shield film over the photoreceptor can bereduced and the light shield wall having a predetermined height can beprovided on a surface of the light shield film facing the microlens tomaintain a maximum value of sensitivity of the photoreceptor obtainedwhen the focus detecting device includes the light shield film withoutthe light shield wall, and to increase a minimum value of thesensitivity.

The light shield wall having a predetermined height can be provided on asurface of the light shield film facing the microlens to maintain aminimum value of sensitivity of the photoreceptor obtained when thefocus detecting device includes the light shield film without the lightshield wall, and to decrease a maximum value of the sensitivity.

A cover area of the light shield film over the photoreceptor can bereduced and the light shield wall having a predetermined height can beprovided on a surface of the light shield film facing the microlens todecrease a maximum value of sensitivity of the photoreceptor obtainedwhen the focus detecting device includes the light shield film withoutthe light shield wall, and to increase a minimum value of thesensitivity.

A cover area of the light shield film over the photoreceptor can bereduced and the light shield wall having a predetermined height can beprovided on a surface of the light shield film facing the photoreceptorto maintain a minimum value of sensitivity of the photoreceptor obtainedwhen the focus detecting device includes the light shield film withoutthe light shield wall, and to increase a maximum value of thesensitivity.

The light shield wall having a predetermined height can be provided on asurface of the light shield film facing the photoreceptor to maintain amaximum value of sensitivity of the photoreceptor obtained when thefocus detecting device includes the light shield film without the lightshield wall, and to increase a minimum value of the sensitivity.

A cover area of the light shield film over the photoreceptor can bereduced and the light shield wall having a predetermined height can beprovided on a surface of the light shield film facing the photoreceptorto increase a maximum value of sensitivity of the photoreceptor obtainedwhen the focus detecting device includes the light shield film withoutthe light shield wall, and to decrease a minimum value of thesensitivity.

The light shield walls having a predetermined height can be provided onboth surfaces of the light shield film facing the microlens and thephotoreceptor to decrease a maximum value of sensitivity of thephotoreceptor obtained when the focus detecting device includes thelight shield film without the light shield wall, and to decrease aminimum value of the sensitivity.

A second focus detecting device according to an aspect of the presenttechnology includes: a microlens; a photoreceptor configured to receivelight entering through the microlens; and a plurality of light shieldfilms provided between the microlens and the photoreceptor andconfigured to limit an amount of light on the photoreceptor.

The focus detecting device according to claim 13, wherein a cover areaof a light shield film closer to the microlens, of the plurality oflight shield curtains, over the photoreceptor is made smaller than acover area of a light shield film closer to the photoreceptor over thephotoreceptor to maintain a maximum value of sensitivity of thephotoreceptor obtained when the light shield films are single-layered,and to increase a minimum value of the sensitivity.

An electronic device according to an aspect of the present technologyincludes: a microlens; a photoreceptor configured to receive lightentering through the microlens; a light shield film provided between themicrolens and the photoreceptor and configured to limit an amount oflight on the photoreceptor; a light shield wall provided vertical to thelight shield film; a detector configured to detect a focus using asignal from the photoreceptor; and a signal processing unit configuredto process a signal outputted from the photoreceptor without the lightshield film.

A third focus detecting device according to an aspect of the presenttechnology includes: a lens array including a plurality of lenses; aphotoreceptor including a plurality of light-receiving pixels; and alight shield unit provided between the lens array and the photoreceptorin a first direction. The lens array includes a first lens and a secondlens. The photoreceptor includes a first light-receiving pixel oppositeto the first lens and a second light-receiving pixel opposite to thesecond lens. The light shield unit includes a first protrusion regionthat overlaps the first lens and protrudes in the first direction and asecond protrusion region that overlaps the second lens and protrudes inthe first direction.

The light shield unit can include a light shield film that overlaps thefirst lens and the second lens, a first light shield wall that extendsin the first direction in the first protrusion region, and a secondlight shield wall that extends in the first direction in the secondprotrusion region.

The first light shield wall and the second light shield wall can bethicker than the light shield film in the first direction.

A first focus detecting device according to an aspect of the presenttechnology includes: a microlens; a photoreceptor configured to receivelight entering through the microlens; a light shield film providedbetween the microlens and the photoreceptor and configured to limit anamount of light on the photoreceptor; and a light shield wall providedvertical to the light shield film.

A second focus detecting device according to an aspect of the presenttechnology includes: a microlens; a photoreceptor configured to receivelight entering through the microlens; and a plurality of light shieldfilms provided between the microlens and the photoreceptor andconfigured to limit an amount of light on the photoreceptor.

A third focus detecting device according to an aspect of the presenttechnology includes: a lens array including a plurality of lenses; aphotoreceptor including a plurality of light-receiving pixels; and alight shield unit provided between the lens array and the photoreceptorin a first direction. The lens array includes a first lens and a secondlens. The photoreceptor includes a first light-receiving pixel oppositeto the first lens and a second light-receiving pixel opposite to thesecond lens. The light shield unit includes a first protrusion regionthat overlaps the first lens and protrudes in the first direction and asecond protrusion region that overlaps the second lens and protrudes inthe first direction.

An electronic device according to an aspect of the present inventionincludes the focus detecting device.

Advantageous Effects of Invention

According to an aspect of the present technology, a desired sensitivitycan be obtained.

The advantages described here should not be construed as restrictive andmay be any of the advantages described in the present disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a diagram illustrating a configuration of an imaging device.

FIG. 2 is a diagram illustrating a configuration of a solid-state imagesensor.

FIG. 3 is a diagram illustrating a configuration of a semiconductorpackage.

FIG. 4 is a diagram for describing focus detection with a phasedifference system.

FIG. 5 is a diagram for describing focus detection with a phasedifference system.

FIG. 6 is a diagram illustrating a configuration of a focus detectingdevice.

FIG. 7 is a diagram illustrating a configuration of a focus detectingdevice.

FIG. 8 is a diagram illustrating acceptance angle distribution.

FIG. 9 is a diagram illustrating a configuration of a focus detectingdevice.

FIG. 10 is a diagram illustrating acceptance angle distribution.

FIG. 11 is a diagram illustrating a configuration of a focus detectingdevice according to a first embodiment employing the present technology.

FIG. 12 is a diagram illustrating the configuration of the focusdetecting device according to the first embodiment.

FIG. 13 is a diagram illustrating acceptance angle distributionaccording to the first embodiment.

FIG. 14 is a diagram illustrating acceptance angle distributionaccording to the first embodiment.

FIG. 15 is a diagram for describing other shapes of a light shield wall.

FIG. 16 is a diagram illustrating the configuration of the focusdetecting device according to the second embodiment.

FIG. 17 is a diagram illustrating acceptance angle distributionaccording to the second embodiment.

FIG. 18 is a diagram illustrating the configuration of the focusdetecting device according to the third embodiment.

FIG. 19 is a diagram illustrating acceptance angle distributionaccording to the third embodiment.

FIG. 20 is a diagram illustrating the configuration of the focusdetecting device according to the fourth embodiment.

FIG. 21 is a diagram illustrating acceptance angle distributionaccording to the fourth embodiment.

FIG. 22 is a diagram illustrating the configuration of the focusdetecting device according to the fifth embodiment.

FIG. 23 is a diagram illustrating acceptance angle distributionaccording to the fifth embodiment.

FIG. 24 is a diagram illustrating the configuration of the focusdetecting device according to the sixth embodiment.

FIG. 25 is a diagram illustrating acceptance angle distributionaccording to the sixth embodiment.

FIG. 26 is a diagram illustrating the configuration of the focusdetecting device according to the seventh embodiment.

FIG. 27 is a diagram illustrating acceptance angle distributionaccording to the seventh embodiment.

FIG. 28 is a diagram illustrating the configuration of the focusdetecting device according to the eighth embodiment.

FIG. 29 is a diagram illustrating acceptance angle distributionaccording to the eighth embodiment.

FIG. 30 is a functional block diagram illustrating an entireconfiguration according to an application example (capsule-typeendoscope camera).

FIG. 31 is a functional block diagram illustrating an entireconfiguration according to an application example (insert-type endoscopecamera).

FIG. 32 is a functional block diagram illustrating an entireconfiguration according to an application example (vision tip).

DESCRIPTION OF EMBODIMENTS

Modes for carrying out the present technology (hereinafter referred toas embodiments) will be described below. The description is provided inthe following order.

1. Configuration of Imaging Device

2. Configuration of Image Sensor

3. Autofocus with Image-Plane Phase Difference System

4. Configuration of Focus Detecting Device According to First Embodiment

5. Configuration of Focus Detecting Device According to SecondEmbodiment

6. Configuration of Focus Detecting Device According to Third Embodiment

7. Configuration of Focus Detecting Device According to FourthEmbodiment

8. Configuration of Focus Detecting Device According to Fifth Embodiment

9. Configuration of Focus Detecting Device According to Sixth Embodiment

10. Configuration of Focus Detecting Device According to SeventhEmbodiment

11. Configuration of Focus Detecting Device According to EighthEmbodiment

12. Application Examples

Configuration of Imaging Apparatus

The present technology described below can be applied to autofocusmechanisms of, for example, digital cameras. Autofocus systems mainlyinclude contrast system and phase difference system, and the presenttechnology can be applied to the phase difference system. In thefollowing description, image-plane phase difference autofocus will bedescribed as an example.

Image-plane phase difference autofocus can be applied to generalelectronic devices having a semiconductor package in an image capturingunit (photoelectric converter), wherein general electronic devicesinclude imaging devices, such as digital still cameras and videocameras, mobile terminals having an imaging function, such as mobilephones, and copying machines having an imaging device in an imagereader.

FIG. 1 is a block diagram illustrating an exemplary configuration of anelectronic device, for example an imaging device, according to thepresent technology. As shown in FIG. 1, an imaging device 10 accordingto the present technology includes an optical system including a lensgroup 21, a solid-state image sensor (imaging device) 22, a digitalsignal processor (DSP) circuit 23, a frame memory 24, a display 25, arecorder 26, an operating unit 27, and a power source 28. The DSPcircuit 23, the frame memory 24, the display 25, the recorder 26, theoperating unit 27, and the power source 28 are connected to each otherthrough a bus line 29.

The lens group 21 takes incident light (image light) reflected from asubject, and forms an image on an imaging surface of the solid-stateimage sensor 22. The solid-state image sensor 22 converts the amount ofincident light focused on the imaging surface by the lens group 21 intoelectric signals on a pixel-by-pixel basis and outputs the electricsignals as pixel signals.

The DSP circuit 23 processes signals from the solid-state image sensor22. For example, the solid-state image sensor 22 includes pixels fordetecting a focus, and processes signals from the pixels to detect afocus, as described below in detail. The solid-state image sensor 22includes pixels for constructing the image of captured subject andprocesses signals from the pixels to develop the pixels into the framememory 24.

The display 25 is composed of a panel-type display, such as a liquidcrystal display or an organic electro luminescence (EL) display, anddisplays moving or still pictures captured by the solid-state imagesensor 22. The recorder 26 records the moving or still pictures capturedby the solid-state image sensor 22 in recording media such as videotapes or digital versatile disks (DVDs).

The operating unit 27 issues operation commands for various functions ofthe imaging device under user's operation. The power source 28appropriately supplies various types of powers that function as powerfor operating the DSP circuit 23, the frame memory 24, the display 25,the recorder 26, and the operating unit 27 to such supply targets.

The imaging device having the above configuration can be used as animaging device, for example, a video camera, a digital still camera, acamera module for mobile devices, such as mobile phones. In the imagingdevice, a semiconductor package including phase difference detectionpixels as described below can be used as the solid-state image sensor22.

Configuration of Image Sensor

FIG. 2 is a diagram illustrating the configuration of a solid-stateimage sensor 22, for example, a system configuration diagramillustrating the outline of the configuration of a CMOS image sensor,which is a type of X-Y address type imaging device. As used herein, theCMOS image sensor refers to an image sensor produced by applying orpartially using CMOS process.

The CMOS image sensor 100 in FIG. 2 includes a pixel array unit 111formed on a semiconductor substrate, not shown, and peripheral circuitunits integrated on the same semiconductor substrate as for the pixelarray unit 111. The peripheral circuit units include, for example, avertical drive unit 112, a column processing unit 113, a horizontaldrive unit 114, and a system control unit 115.

The CMOS image sensor 100 further includes a signal processing unit 118and a data storage unit 119. The signal processing unit 118 and a datastorage unit 119 may be mounted on the same substrate as of the CMOSimage sensor 100 or may be mounted on a substrate different from that ofthe CMOS image sensor 100. The processing in the signal processing unit118 and the data storage unit 119 may be performed by external signalprocessing units, for example, a digital signal processor (DSP) circuitor software, provided on a substrate different from that of the CMOSimage sensor 100.

The pixel array unit 111 includes unit pixels (hereinafter may bereferred to as “pixels”) arranged in row and column directions, that is,two-dimensionally arranged in a matrix, wherein the unit pixels have aphotoelectric converter configured to generate and accumulatephotocharges according to the amount of received light. As used herein,the row direction refers to the pixel array direction of pixel rows(e.g., horizontal direction), and the column direction refers to thepixel array direction of pixel columns (e.g., vertical direction).

In the matrix pixel array in the pixel array unit 111, each of the pixeldrive lines 116 is provided for each pixel row in the row direction andeach of the vertical signal lines 117 is provided for each pixel columnin the column direction. The pixel drive lines 116 transmit drivesignals for performing drive in reading signals from the pixels. In FIG.1, each pixel drive line 116 is shown as a single wire, but is notlimited to a single wire. One end of the pixel drive line 116 isconnected to an output end corresponding to each row of the verticaldrive unit 112.

The vertical drive unit 112 includes a shift register and an addressdecoder, and drives all pixels at the same time or pixels in each rowunit or the like for the pixels in the pixel array unit 111. That is,the vertical drive unit 112, together with the system control unit 115configured to control the vertical drive unit 112, forms a drive unitconfigured to drive the pixels in the pixel array unit 111. Although thedetailed configuration of the vertical drive unit 112 is not shown inthe drawing, the vertical drive unit 112 generally includes two scansystems, a read scan system and a sweep scan system.

The read scan system sequentially conducts selective scan on the unitpixels of the pixel array unit 111 in row units in order to read signalsfrom the unit pixels. The signals read from the unit pixels are analogsignals. The sweep scan system conducts sweep scan on read rows to beread-scanned by the read scan system, prior to the read scan by ashutter speed time.

The sweep scan with the sweep scan system sweeps out excess charges fromthe photoelectric converters for the unit pixels in read rows to resetthe photoelectric converters. Sweeping out excess charges (resetting)with the sweep scan system activates a so-called electronic shutteroperation. As used herein, the electronic shutter operation refers to anoperation to remove photocharges in the photoelectric converters andstart new exposure (start accumulation of photocharges).

The signals read by the read operation with the read scan systemcorrespond to the amount of light received after the last read operationor the electronic shutter operation. The period from a read timing bythe last read operation or a sweep timing by the electronic shutteroperation to a read timing by the current read operation is an exposureperiod of photocharges in the unit pixels.

The signals outputted from the unit pixels in the pixel rows that areselectively scanned by the vertical drive unit 112 are inputted to thecolumn processing unit 13 through the vertical signal lines 117 for therespective pixel columns. The column processing unit 113 conductspredetermined signal processing on signals outputted from the pixels inthe selected rows through the vertical signal lines 117 for therespective pixel columns of the pixel array unit 111, and temporarilystores pixel signals after signal processing.

Specifically, the column processing unit 113 performs at least noiseremoving process, for example, correlated double sampling (CDS) processas signal processing. The CDS process with the column processing unit113 removes fixed pattern noise unique to pixels, such as reset noise orthe threshold variation of an amplification transistor in a pixel. Thecolumn processing unit 113 may be further provided with ananalog-digital (AD) conversion function to covert analog pixel signalsinto digital signals and output the digital signals, in addition to thenoise removing process.

The horizontal drive unit 114 includes a shift register and an addressdecoder, and sequentially selects a unit circuit corresponding to thepixel column of the column processing unit 113. The selective scan withthe horizontal drive unit 114 allows sequential output of pixel signalsprocessed per unit circuit in the column processing unit 113.

The system control unit 115 includes a timing generator configured togenerate various timing signals, and performs drive control on thevertical drive unit 112, the column processing unit 113, the horizontaldrive unit 114, and the like based on the various timings generated bythe timing generator.

The signal processing unit 118 has at least an arithmetic processingfunction, and performs various types of signal processing, such asarithmetic processing, on pixel signals outputted from the columnprocessing unit 113. The data storage unit 119 temporarily stores datarequired for signal processing in the signal processing unit 118.

FIG. 3 is a cross-sectional diagram schematically illustrating the basicconfiguration of the semiconductor package constituting the CMOS imagesensor 100 in FIG. 2, which is an imaging device employing the presenttechnology. The semiconductor package 200 in FIG. 3 constitutes abackside irradiation-type CMOS image sensor.

In the semiconductor package 200 in an effective pixel area shown inFIG. 3, a wiring layer 212 made of SiO₂ is formed on a support substrate211, and a silicon substrate 213 is formed on the wiring layer 212.Silicon, glass epoxy, glass, plastic, or the like is used for thesupport substrate 211. Multiple photodiodes 214 (optical elements) areformed at predetermined intervals on the surface of the siliconsubstrate 213 as the photoelectric converters for the pixels.

A protective film 215 made of SiO₂ is formed on the silicon substrate213 and the photodiodes 214. A light shield film 216 is formed on theprotective film 215 between the adjacent photodiodes 214 in order toavoid leakage of light into the adjacent pixels. Although the lightshield film 216 for avoiding leakage of light into the adjacent pixelsare provided, a light shield film 216 for preventing excess light fromentering pixels for focus detection may be provided as described below.

A flattening film 217 is provided on the protective film 215 and thelight shield film 216 to flatten an area on which a color filter is tobe formed. A color filter layer 218 is formed on the flattening film217. In the color filter layer 218, multiple color filters are providedfor the pixels respectively, and the colors of the respective colorfilters are disposed, for example, in a Bayer array.

A first organic material layer 219 is formed on the color filter layer218. The first organic material layer 219 is made of, for example, anacrylic resin material, a styrene resin material, or an epoxy resinmaterial. Microlenses 220 are formed on the first organic material layer219. The microlenses 220 are thus formed on the substrate includingmultiple layers and having the photodiodes 214. In the microlenses 220,microlenses for condensing light on the photodiodes 214 of the pixelsare formed for the pixels, respectively. The microlenses 220 are formedin an inorganic material layer and are made of SiN, SiO, or SiOxNy(where 0<x≤1 and 0<y≤1).

A cover glass 221 is bonded to the upper parts of the microlenses 220through a second organic material layer 222. The cover glass 221 is notlimited to glass, and a transparent plate, such as resin, may be used. Aprotective film may be formed between the microlenses 220 and the coverglass 221 to prevent permeation of water and impurities. The secondorganic material layer 222 is made of, for example, an acrylic resinmaterial, a styrene resin material, or an epoxy resin material as in thefirst organic material layer 219.

The configuration shown in FIG. 3 is illustrative only, and the presenttechnology described below can be applied to other configurations, forexample, configurations further including other layers in addition tothe above layers or lacking any of the above layers.

Autofocus with Image-Plane Phase Difference System

FIG. 4 is a diagram for describing image-plane phase differenceautofocus. A predetermined number of pixels in the pixel array unit 111in which the pixels are two-dimensionally arranged in a matrix areassigned to phase difference detection pixels. Multiple phase differencedetection pixels are provided at predetermined positions in the pixelarray unit 111.

The configuration of the phase difference detection pixels shown in FIG.4 corresponds to a part of the solid-state image sensor 22 shown inFIGS. 2 and 3. FIG. 4 is a diagram illustrating a part of thesolid-state image sensor 22 including the phase difference detectionpixels and a diagram illustrating an extracted part necessary for thefollowing description. Hereinafter, a device including phase differencedetection pixels and including a focus defecting part is appropriatelyreferred to as a focus detecting device.

The phase difference detection pixels are pixels used for detecting afocus with the phase difference system and the imaging pixels are pixelsthat are different from phase difference detection pixels and are usedfor imaging.

The focus detecting device shown in FIG. 4 includes a lens group 21,microlenses 220-1 to 220-4, light shield films 216-1 to 216-3, andphotodiodes 214-1 to 214-4.

In the solid-state image sensor shown in FIG. 4, the photodiodes 214-2and 214-3 function as phase difference detection pixels and are taken aspixels for acquiring image signals for autofocusing (focus detection).The photodiodes 214-1 and 214-4, which are disposed to sandwich thephotodiodes 214-2 and 214-3, are used as imaging pixels and are taken aspixels for acquiring image signals based on light reflected from asubject.

The photodiode 214-1 receives light reflected from a subject andcondensed by the microlens 220-1. The photodiode 214-2 receives lightreflected from a subject and condensed by the microlens 220-2. Thephotodiode 214-3 receives light reflected from a subject and condensedby the microlens 220-3. The photodiode 214-4 receives light reflectedfrom a subject and condensed by the microlens 220-4.

The light shield film 216-1 is provided to prevent light from themicrolens 220-1 from entering the photodiode 214-2 and light from themicrolens 220-2 from entering the photodiode 214-1. Similarly, the lightshield film 216-3 is provided to prevent light from the microlens 220-4from entering the photodiode 214-3 and light from the microlens 220-3from entering the photodiode 214-4.

The light shield films 216-1 and 216-3 are provided between the adjacentphotodiodes 214 to avoid leakage of light into adjacent pixels(photodiodes). With regard to the light shield film 216, the lightshield film 216-3 also has a function to realize a function of receivinglight at a selected angle of incidence (hereinafter referred to asseparation ability) in addition to the function of avoiding leakage oflight into the adjacent pixels (photodiodes).

That is, as shown in FIG. 4, the light shield film 216-2 is providedfrom approximately the center of the photodiode 214-2 to approximatelythe center of the photodiode 214-3 such that light passing through the Aside of the lens group 21 (left side of the drawing) is incident on thephotodiode 214-3, and light passing through the B side of the lens group21 (right side of the drawing) is incident on the photodiode 214-2.

The presence of the light shield film 216-2 allows the photodiodes toseparately receive light from the left part of the lens group 21 andlight from the right part of the lens group 21. Receiving light from theleft part of the lens group 21 and light from the right part with thephotodiodes 214-2 and 214-3 respectively enables detection of a focallocation as shown in FIG. 5.

That is, in front or back focus, the output from the photodiode 214-2does not agree with the output from the photodiode 214-3 (the outputsfrom a pair of phase difference detection pixels do not agree with eachother). In focus, the output from the photodiode 214-2 agrees with theoutput from the photodiode 214-3 (the outputs from a pair of phasedifference detection pixels agree with each other). In the case of frontor back focus, focal detection is achieved by moving the lens group 21to a focus position.

When focus positions are detected with the phase difference system,focal positions can be detected at a relatively high speed to achievehigh-speed autofocus. The phase difference system, however, may causereduced sensitivity and, for example, may make it difficult to detectfocal positions in a dark place or the like.

With reference again to FIG. 4, the light shield film 216-2 extends tothe central part of the photodiode 214-2. As compared with thephotodiode 214-1, the light shield film does not extend to thephotodiode 214-1 but extends to the central part of the photodiode214-2. As the amount of light incident on the photodiode 214-1 iscompared with the amount of light incident on the photodiode 214-2, theamount of light on the photodiode 214-1 is larger than that on thephotodiode 214-2.

The sensitivity of the photodiode 214-1 is thus higher than that of thephotodiode 214-2. As described above, the sensitivity of the photodiode214-2 is reduced by the influence of the light shield film 216-2provided to impart the separation ability. In addition, increasingpixels tends to reduce the size of each pixel, and reduced pixel sizemay decrease the sensitivity. This may often reduce the sensitivity ofthe photodiode 214-2. The same applies to the photodiode 214-3 as aphase difference detection pixel.

As compared with ordinary pixels, the sensitivity of the phasedifference detection pixel is reduced by light shading to increase theinfluence of the reduction in pixel size, which may reduce the accuracyof focal position detection. Since reduced pixel size may degrade theseparation ability, the absence of the separation ability may fail toachieve focus detection by image-plane phase difference detection.

Reference is made to FIG. 6. FIG. 6 is a top plan view of phasedifference detection pixels, for example, a top view of the phasedifference detection pixels illustrated in FIG. 4. In FIG. 6, a singlepixel, shown as a square, represents each of the photodiodes 214 in thisdescription. FIG. 6 illustrates the photodiodes 214-2 and 214-3 of thephase difference detection pixels.

In the following description, the case where the phase differencedetection pixels are provided next to each other is described as anexample, but the phase difference detection pixels may be provided apartfrom each other. The present technology described below can be alsoapplied to the case where the phase difference detection pixels areprovided apart from each other.

In the plan view shown in FIG. 6, the light shield film 216 is providedabove the photodiodes 214-2 and 214-3 except for openings. In thecross-sectional view (side view) of the pixels as shown in FIG. 4, thelight shield film 216 appears to be discontinuously provided such thatan opening is provided between the light shield film 216-1 and the lightshield film 216-2. In the plan view as shown in FIG. 6, the light shieldfilm 216 is continuously provided and partially open as openings.

In this case, an opening formed between the light shield films 216-1 and216-2 and provided above the photodiode 214-2 is referred to as anopening 230-1; and an opening formed between the light shield films216-2 and 216-3 and provided above the photodiode 214-3 is referred toas an opening 230-2.

Since the light shield film 216 is provided for the phase differencedetection pixels as described above, the sensitivity of the phasedifference detection pixels is lower than that of ordinary pixels. Toimprove the sensitivity of the phase difference detection pixels, theamount of light incident on the photodiodes 214 through the openings 230needs to be increased. To increase the amount of light incident on (theamount of light received by) the photodiodes 214, the image formationpoint of light condensed by the microlenses 220 may be controlled bychanging, for example, the curvature of the microlenses 220, or the areaof the phase difference detection pixels covered by the light shieldfilm 216 and shielded from light may be controlled.

With reference to FIGS. 7 and 8, the case where the image formationpoint of light condensed by the microlens 220 may be controlled bychanging, for example, the curvature of the microlens 220 to increasethe amount of light received will be described.

FIG. 7 is a diagram illustrating the phase difference detection pixelsextracted from the pixels shown in FIG. 4. The microlenses 220-2 and220-3 are indicated by the solid lines and dashed lines, where the solidlines represent the shape of the microlenses 220 with a larger curvatureand the dashed lines represent the shape of the microlenses 220 with asmaller curvature.

In FIG. 7, the solid arrows represent the path of light incident on themicrolenses 220 using the microlenses 220 indicated by the solid lines;and the dashed arrows represent the path of light incident on themicrolenses 220 using the microlenses 220 indicated by the dashed lines.

With reference to the solid arrows and dashed arrows shown in FIG. 7, itis found that the solid arrows pass through the openings 230, but someof the dashed arrows are shielded by the light shield film 216-2. Thisindicates that the amount of light passing through the openings 230 ischanged by modifying the curvature of the microlenses 220, which changesthe amount of light received by the photodiodes 214.

This is shown as a graph in FIG. 8. The abscissa of the graph shown inFIG. 8 represents the angle of incidence of light, and the ordinaterepresents the output value of the pixels according to the incidentlight. In FIG. 8, the solid line graph is a graph showing thephotodiodes 214 that receive light from the microlenses 220 having alarge curvature and indicated by the solid lines in FIG. 7.

In FIG. 8, the dashed line graph is a graph showing the photodiodes 214that receive light from the microlenses 220 having a small curvature andindicated by the dashed lines in FIG. 7. In FIG. 8 the left side showsthe amount of light received by the photodiode 214-2 illustrated in FIG.7, and the right side shows the amount of light received by thephotodiode 214-3 illustrated in FIG. 7.

FIG. 8 shows that the amount of light received by a phase differencedetection pixel reaches the maximum value at an angle of incidenceexcept for 0 degree. That is, the amount of light received by a phasedifference detection pixel depends on the angle of incidence of lightand reaches the maximum value at a predetermined angle of incidence oflight. A phase difference detection pixel, for example the photodiode214-2, efficiently receives incident light from the right side toprovide the maximum value, but fails to receive incident light from theleft side to output a small value. Similarly, the photodiode 214-2efficiently receives incident light from the left side to provide themaximum value, but fails to receive incident light from the right sideto output a small value.

In this way, phase difference detection pixels are configured to receivelight from a predetermined direction and hardly receive light from thedirections other than the predetermined direction.

FIG. 8 shows that the maximum value for the microlenses 220 with a largecurvature is larger than that for the microlenses 220 with a smallercurvature and the minimum value is smaller. This indicates that thecurvature of the microlenses 220 is increased to increase the maximumvalue of sensitivity and the curvature of the microlenses 220 is reducedincrease the minimum value of sensitivity.

In this way, the sensitivity of phase difference detection pixels can bechanged by modifying the curvature of the microlenses 220. Although thecurvature of the microlenses 220 is described here as an example, thesensitivity of phase difference detection pixels can be changed bymodifying the conditions other than curvature, for example, materials ofthe microlenses 220.

This suggests that the conditions of the microlenses 220 may be changed,for example, the curvature of the microlenses 220 is increased in orderto improve the sensitivity of the phase difference detection pixels.However, when the conditions (e.g., curvature) of only the microlenses220 for the phase difference detection pixels are modified in themodification of the conditions of the microlenses 220, the continuity ofthe microlenses 220 for the phase difference detection pixels and forthe imaging pixels may deteriorate to degrade mixed colors in imagingpixels in the vicinity of the phase difference detection pixels.

The modification of the conditions for the microlenses 220 for allpixels including phase difference detection pixels and imaging pixelscan eliminate a concern about the above continuity deterioration, butoften changes the light condensing capability of imaging pixels to varythe properties of the imaging pixels.

When the acceptance angle distribution for the phase differencedetection pixels is accordingly controlled by modifying the conditionsof the microlenses 220, the properties of the imaging pixels may vary tocause deterioration in image quality or the like.

With reference to FIGS. 9 and 10, the case where the amount of lightreceived is increased by controlling the cover area of the light shieldfilm 216 over the microlenses 220, in other words, by controlling thesize of the openings 230 will be described.

FIG. 9 is a diagram illustrating the phase difference detection pixelsextracted from the pixels shown in FIG. 4. The light shield film 216-2is indicated by the solid line and the dashed line. The solid line showsthe case where the light shield film 216-2 is short and the openings 230are large, and the dashed line shows the case where the light shieldfilm 216-2 is long and the openings 230 are small.

The case of the light shield film 216-2 indicated by the solid lineshown in FIG. 9 is compared with the case of the light shield film 216-2indicated by the dashed line. In the case of the light shield film 216-2indicated by the solid line, the openings 230 are large and thus lightpassing through the microlenses 220 is not shielded by the light shieldfilm 216-2 but received by the photodiodes 214. Although light travelsthe same pathway, in the case of the light shield film 216-2 indicatedby the dashed line, the openings 230 are small and thus light passingthrough the microlenses 220 is shielded by the light shield film 216-2and not received by the photodiodes 214.

This shows that the amount of light passing through the openings 230 ismodified by changing the length of the light shield film 216, or thesize of the openings 230, or the cover area of the light shield film 216over the microlenses 220, which changes the amount of light received bythe photodiodes 214.

This is shown as a graph in FIG. 10. The abscissa of the graph shown inFIG. 10 represents the angle of incidence of light, and the ordinaterepresents the output value (sensitivity) of the pixels according to theincident light. In FIG. 10, the solid line graph is a graph showing thesensitivity of the photodiodes 214 when the light shield film 216-2indicated by the solid line in FIG. 9 is short (when the cover area ofthe light shield film is small). In FIG. 10, the dashed line graph is agraph showing the sensitivity of the photodiodes 214 when the lightshield film 216-2 indicated by the dashed line in FIG. 9 is long (whenthe cover area of the light shield film is large).

In FIG. 10 the left side shows the amount of light received by thephotodiode 214-2 illustrated in FIG. 9, and the right side shows theamount of light received by the photodiode 214-3 illustrated in FIG. 9.

FIG. 10 indicates that both the maximum and minimum values ofsensitivity in the case where the cover area of the light shield film216-2 is small and the openings 230 are large are larger than those inthe case where the cover area of the light shield film 216-2 is largeand the openings 230 are small. This suggests that the cover area of thelight shield film 216-2 is reduced and the openings 230 are increased toincrease the maximum and minimum values of sensitivity.

In this way, the sensitivity of the phase difference detection pixelscan be modified by changing the size of the light shield film 216-2.Although the case of changing the size of the light shield film 216-2 isdescribed here as an example, the sensitivity of the phase differencedetection pixels can be modified similarly by changing the size of thelight shield film 216-1 or 216-3. That is, the sensitivity of the phasedifference detection pixels can be modified depending on the cover areaof the light shield film 216 over the photodiodes 214.

However, a small cover area of the light shield film 216, or the largeopenings 230 may reduce the resolution of the phase difference detectionpixels to degrade functions, such as autofocus.

As described with reference to FIGS. 7 to 10, the sensitivity of thephase difference detection pixel can be controlled by adjustingconditions, such as the curvature of the microlenses 220, and the coverarea of the light shield film 216. It is, however, difficult to obtain adesired resolution and sensitivity as phase difference detection pixels,as described above.

When the acceptance angle distribution of the phase difference detectionpixels is controlled by adjusting conditions, such as the curvature ofthe microlenses 220 and the cover area of the light shield film 216, thefeatures of the acceptance angle distribution at both higher outputs andlower outputs vary and thus the features at higher outputs and loweroutputs are difficult to adjust independently.

If the features of the acceptance angle distribution at higher outputsand lower outputs can be controlled independently, the following effectscan be obtained.

That is, for example, when only lower outputs are increased while higheroutputs are maintained in the acceptance angle distribution of the phasedifference detection pixels without varying the properties of theimaging pixels, the phase difference detection pixels can be also usedas imaging pixels while maintaining some phase difference detectionproperties.

As another effect, when only lower outputs are further decreased whilehigher outputs are maintained in the acceptance angle distribution ofthe phase difference detection pixels without varying the properties ofthe imaging pixels, phase difference detection properties can beimproved.

Therefore, description on phase pixels capable of adjusting the featuresof the acceptance angle distribution at higher outputs and lower outputsindependently is added.

Configuration of Focus Detecting Device According to First Embodiment

FIG. 11 is a top plan view of the phase difference detection pixels in afocus detecting device according to a first embodiment, and FIG. 12 is aside sectional view. In the phase difference detection pixels in thefocus detecting device shown in FIGS. 11 and 12, the same referencenumerals are given to the same parts as in the phase differencedetection pixels in the focus detecting device shown in FIGS. 6, 7, and9, and the description on the same parts is appropriately omitted.

The phase difference detection pixels shown in FIG. 11 further includelight shield walls 301 in the phase difference detection pixels shown inFIG. 6. The light shield walls 301 are light shield films verticallyprovided as shown in FIG. 12. In the following description, a lightshield member horizontally disposed in the phase difference detectionpixels is referred to as a light shield film, and a light shield membervertically disposed is referred to as a light shield wall. The directionof the light shield film 216-2 (the right-left direction in the drawing)is taken as a horizontal direction, and the direction of the lightshield walls 301 (the up-down direction in the drawing) is taken as ahorizontal direction.

A light shield wall 301-1 is provided on the upper surface of the lightshield film 216-2 facing the microlenses 220, and a light shield wall301-2 is provided on the upper surface of the light shield film 216-2facing the microlenses 220. The light shield walls 301-1 and 301-2 arelocated at the ends of the light shield film 216-2 and provided to havea predetermined vertical height to the light shield film 216-2. Thelight shield walls 301 are provided next to the openings 230.

The description is continued here provided that the light shield walls301 are provided on the light shield film 216-2, but the light shieldwalls 301 may be also provided on the light shield film 216-1 and/or thelight shield film 216-3.

In the phase difference detection pixels shown in FIG. 12, the lightshield film 216-2 is indicated by the solid line and the dashed line.The solid line represents the light shield film 216-2 provided with thelight shield walls 301. The dashed line represents the light shield film216-2′ with no light shield wall 301, where the light shield film 216-2′has the same length as the light shield film 216-2 shown in FIG. 7 orthe like. The light shield film 216-2′ is illustrative only forcomparison and is not provided for a component necessary for the phasedifference detection pixels illustrated in FIG. 12.

In the description on second to eighth embodiments described below, theparts indicated by the dashed line are illustrated for the purpose ofexplanation and is not illustrated as necessary components.

In the phase difference detection pixels shown in FIG. 12, the lightshield film 216-2 is shorter than the light shield film 216-2′ known inthe art, and the light shield walls 301 having a predetermined heightare provided at the ends of the surface of the light shield film 216-2facing the microlenses 220.

In the phase difference detection pixels shown in FIG. 12, a small coverarea of the light shield film 216-2 results in large openings 230,providing the effects obtained by the large openings 230.

Providing the light shield walls 301 on the upper surface of the lightshield film 216-2 can give the same advantages as when the cover area islarge like the light shield film 216-2′.

This is shown as a graph in FIG. 13. The abscissa of the graph shown inFIG. 13 represents the angle of incidence of light, and the ordinaterepresents the output value (sensitivity) of the pixels according to theincident light.

In FIG. 13, the solid line graph is a graph showing the sensitivity ofthe photodiodes 214 in the phase difference detection pixels providedwith the light shield walls 301 for the light shield film 216-2indicated by the solid line in FIG. 12. In FIG. 13, the dashed linegraph is a graph showing the sensitivity of the photodiodes 214 in thephase difference detection pixels without the light shield walls 301 forthe light shield film 216-2′ indicated by the dashed line in FIG. 12.

FIG. 13 indicates that the minimum value of sensitivity can be increasedby providing the light shield walls 301 without significantly changingthe maximum value of sensitivity. In other words, providing the lightshield walls 301 for the phase difference detection pixels can increaseonly lower outputs while maintain higher outputs in the acceptance angledistribution.

The applicants have simulated the acceptance angle distribution for thephase difference detection pixels provided with the light shield walls301 as shown in FIG. 12. The results are shown in FIG. 14. As in thegraph shown in FIG. 13, the abscissa of the graph shown in FIG. 14represents the angle of incidence of light, and the ordinate representsthe output value (sensitivity) of the pixels according to the incidentlight.

In FIG. 14, the graph marked by triangles represents the sensitivity ofthe photodiodes 214 which are phase difference detection pixels havingthe light shield walls 301; and the graph marked by squares representsthe sensitivity of the photodiodes 214 in the phase difference detectionpixels without the light shield walls 301 for the light shield film216-2′.

The graph in FIG. 14 also shows that lower outputs are increased whilehigher outputs are maintained in the acceptance angle distribution.

Since the properties of the phase difference detection pixels aresimilar to those of the imaging pixels in that lower outputs areincreased while higher outputs are maintained in the acceptance angledistribution, phase difference detection pixels can be used as imagingpixels. Although not shown, the acceptance angle distribution of imagecapturing pixels has the maximum value at an angle of 0 degree, and thedifference in sensitivity between the maximum value and the minimumvalue is small.

Since the difference in sensitivity between the maximum value and theminimum value is reduced by maintaining higher outputs and increasinglower outputs in the acceptance angle distribution to provide propertiessimilar to those of imaging elements, phase difference detection pixelscan be used as imaging pixels. In addition, formation of light shieldwalls on a light shield film for the phase difference detection pixelsdoes not change the structure of the imaging pixels and thus does notaffect the properties of the image capturing pixels, enabling the aboveadjustment of the properties of the phase difference detection pixels.

In this way, the incident light at higher outputs in the acceptanceangle distribution can be controlled by the light shield walls 301, andthe incident light at lower outputs can be controlled by the lightshield film 216. This allows individual control of higher outputs andlower outputs of sensitivity.

The light shield walls 301 have a rectangle shape as shown in FIG. 12and are provided at the ends of the surface of the light shield film216-2 as described above. The shape and position of the light shieldwalls 301 are not limited to the shape and position shown in FIG. 12.

FIG. 15 illustrates another example of the light shield wall 301. Theexample shown in FIG. 15A represents a light shield wall 301A in whichthe cross-section of the light shield wall 301 has a triangular shape.Those having a shape partially having a predetermined height, such asthe light shield wall 301A, can be used as a light shield wall.

In the example shown in FIG. 15B, the light shield wall 301 is notprovided at the end of the light shield film 216-2 but a light shieldwall 301B is disposed at a small distance from the end of the uppersurface of the light shield film 216. Like the light shield wall 301B,like the light shield wall 301B, the light shield wall 301B may beprovided at any position on the light shield film 216, and thesensitivity can be adjusted by the position and height of the lightshield wall 301B.

The shape and position of the light shield walls 301 are accordinglyinvolved in the adjustment of sensitivity and may be any shape andposition that provide a desired sensitivity. In second to eighthembodiments, the shape and position of the light shield walls may bealso any shape and position that provide a desired sensitivity as in thefirst embodiment, although the description is omitted.

Configuration of Focus Detecting Device According to Second Embodiment

FIG. 16 is a side sectional view of phase difference detection pixels ina focus detecting device according to a second embodiment. In the phasedifference detection pixels in the focus detecting device shown in FIG.16, the same reference numerals are given to the same parts as in thephase difference detection pixels in the focus detecting device shown inFIG. 12, and the description on the same parts is appropriately omitted.

In the phase difference detection pixels shown in FIG. 16, the lightshield walls 302 are provided on the light shield film 216-2′. A lightshield wall 302-1 is provided on the upper surface of the light shieldfilm 216-2′ closer to the microlens 220-2, and a light shield wall 302-2is provided on the upper surface of the light shield film 216-2 closerto the microlens 220-3.

The light shield walls 302-1 and 302-2 are located at the ends of thelight shield film 216-2′ and provided to have a predetermined verticalheight to the light shield film 216-2′. The light shield walls 302 areprovided next to the openings 230.

The description is continued here provided that the light shield walls302 are provided on the light shield film 216-2′, but the light shieldwalls 302 may be also provided on the light shield film 216-1 and/or thelight shield film 216-3.

The phase difference detection pixels shown in FIG. 16 have the sameconfiguration as the phase difference detection pixels shown in FIG. 12except that the light shield film 216-2 has a different length. Thelight shield film 216-2′ for the phase difference detection pixels shownin FIG. 16 is longer than the light shield film 216-2 shown in FIG. 12.In other words, the light shield film 216-2′ for the phase differencedetection pixels shown in FIG. 16 has the same length as the lightshield film 216-2 in FIG. 7.

In the phase difference detection pixels shown in FIG. 16, a large coverarea of the light shield film 216-2 results in small openings 230,providing the effects obtained by the small openings 230, for example,the effect of improving the resolution.

The acceptance angle distribution obtained from the phase differencedetection pixels having such a configuration is shown in FIG. 17. Theabscissa of the graph shown in FIG. 17 represents the angle of incidenceof light, and the ordinate represents the output value (sensitivity) ofthe pixels according to the incident light.

The solid line graph in FIG. 17 represents the sensitivity of thephotodiodes 214 in the phase difference detection pixels provided withthe light shield walls 302. The dashed line graph in FIG. 17 representsthe sensitivity of the photodiodes 214 in the phase difference detectionpixels with no light shield wall 302.

FIG. 17 shows that the maximum value of sensitivity can be decreased byproviding the light shield walls 302 without significantly changing theminimum value of sensitivity. In other words, providing the light shieldwalls 302 for the phase difference detection pixels without changing thelength of the light shield film 216 can decrease only higher outputswhile maintain lower outputs in the acceptance angle distribution.

In this way, the incident light can be controlled by the light shieldwalls 302 for higher outputs in the acceptance angle distribution, andthe incident light can be controlled by the light shield film 216 forlower outputs. This allows individual control of higher outputs andlower outputs of sensitivity. In addition, formation of light shieldwalls on a light shield film for the phase difference detection pixelsdoes not change the structure of the imaging pixels and thus does notaffect the properties of the image capturing pixels, enabling the aboveadjustment of the properties of the phase difference detection pixels.

Configuration of Focus Detecting Device According to Third Embodiment

FIG. 18 is a side sectional view of phase difference detection pixels ina focus detecting device according to a third embodiment. In the phasedifference detection pixels in the focus detecting device shown in FIG.18, the same reference numerals are given to the same parts as in thephase difference detection pixels in the focus detecting device shown inFIG. 12, and the description on the same parts is appropriately omitted.

The phase difference detection pixels shown in FIG. 18 have the sameconfiguration as the phase difference detection pixels shown in FIG. 12except that the light shield walls 303 have a different height. That is,the phase difference detection pixels shown in FIG. 18 are the same asthe phase difference detection pixels shown in FIG. 12 except that thelight shield walls 303 are provided on the light shield film 216-2. Thelight shield wall 303-1 is provided on the upper surface of the lightshield film 216-2 closer to the microlens 220-2, and the light shieldwall 303-2 is provided on the upper surface of the light shield film216-2 closer to the microlens 220-3.

The light shield walls 303-1 and 303-2 are located at the ends of thelight shield film 216-2 and provided to have a predetermined verticalheight to the light shield film 216-2. The light shield walls 303-1 and303-2 are higher than the light shield walls 301 shown in FIG. 12. Thelight shield walls 303 are provided next to the openings 230.

The description is continued here provided that the light shield walls303 are provided on the light shield film 216-2, but the light shieldwalls 303 may be also provided on the light shield film 216-1 and/or thelight shield film 216-3.

In this way, in the phase difference detection pixels shown in FIG. 18,the light shield film 216-2 is shorter than the light shield film 216-2′known in the art, and the light shield walls 303 having a predeterminedheight are provided at the ends of the surface of the light shield film216-2 facing the microlenses 220.

In the phase difference detection pixels shown in FIG. 18, a small coverarea of the light shield film 216-2 results in large openings 230,providing the effects obtained by the large openings 230. Providing thelight shield walls 303 on the upper surface of the light shield film216-2 and increasing the height of the light shield walls 303 can givethe same advantages as when the cover area is large like the lightshield film 216-2′.

This is shown as a graph in FIG. 19. The abscissa of the graph shown inFIG. 19 represents the angle of incidence of light, and the ordinaterepresents the output value (sensitivity) of the pixels according to theincident light.

In FIG. 19, the solid line graph is a graph showing the sensitivity ofthe photodiodes 214 in the phase difference detection pixels providedwith the light shield walls 303 for the light shield film 216-2indicated by the solid line in FIG. 18. In FIG. 19, the dashed linegraph is a graph showing the sensitivity of the photodiodes 214 in thephase difference detection pixels without the light shield walls 303 forthe light shield film 216-2′ indicated by the dashed line in FIG. 18.

FIG. 19 shows that providing the light shield walls 303 can decrease themaximum value of sensitivity and increase the minimum value ofsensitivity. In other words, providing the light shield walls 303 forthe phase difference detection pixels can decrease higher outputs can bedecreased and increase lower outputs in the acceptance angledistribution.

As described above, higher outputs and lower outputs can be controlledto obtain desired outputs by adjusting the length of the light shieldfilm 216 (the cover area of the light shield film 216 over thephotodiodes 214), providing the light shield walls 301 to 303 on thesurface of the light shield film 216 facing the microlenses 220 andadjusting the height of the light shield walls 301 to 303. In addition,formation of light shield walls on a light shield film for the phasedifference detection pixels does not change the structure of the imagingpixels and thus does not affect the properties of the image capturingpixels, enabling the above adjustment of the properties of the phasedifference detection pixels.

Configuration of Focus Detecting Device According to Fourth Embodiment

FIG. 20 is a side sectional view of phase difference detection pixels ina focus detecting device according to a fourth embodiment. In the phasedifference detection pixels in the focus detecting device shown in FIG.20, the same reference numerals are given to the same parts as in thephase difference detection pixels in the focus detecting device shown inFIG. 12, and the description on the same parts is appropriately omitted.

The phase difference detection pixels shown in FIG. 20 have the sameconfiguration as the phase difference detection pixels shown in FIG. 12except that the light shield walls 301, which are provided on the uppersurface of the light shield film 216-2 for the phase differencedetection pixels shown in FIG. 12, are provided on the lower surface.That is, a light shield wall 304-1 is provided on the lower surface ofthe light shield film 214-2 closer to the photodiode 214-2, and a lightshield wall 304-2 is provided on the lower surface of the light shieldfilm 216-2 closer to the photodiode 214-3.

The light shield walls 304-1 and 304-2 are located at the ends of thelight shield film 216-2 and provided to have a predetermined verticalheight to the light shield film 216-2. The light shield walls 304 areprovided next to the openings 230.

The description is continued here provided that the light shield walls304 are provided on the lower surface of the light shield film 216-2,but the light shield walls 304 may be also provided on the light shieldfilm 216-1 and/or the light shield film 216-3.

In the phase difference detection pixels shown in FIG. 20, the lightshield film 216-2 is indicated by the solid line and the dashed line.The solid line represents the light shield film 216-2 provided with thelight shield walls 304. The dashed line represents the light shield film216-2′ with no light shield wall 304, where the light shield film 216-2′has the same length as the light shield film 216-2 shown in FIG. 7 orthe like. The light shield film 216-2′ is illustrative only forcomparison and is not provided for a component necessary for the phasedifference detection pixels illustrated in FIG. 20.

In the phase difference detection pixels shown in FIG. 20, the lightshield film 216-2 is shorter than the light shield film 216-2′ known inthe art, and the light shield walls 304 having a predetermined heightare provided at the ends of the surface of the light shield film 216-2facing the photodiodes 214.

In the phase difference detection pixels shown in FIG. 20, a small coverarea of the light shield film 216-2 results in large openings 230,providing the effects obtained by the large openings 230.

This is shown as a graph in FIG. 21. The abscissa of the graph shown inFIG. 21 represents the angle of incidence of light, and the ordinaterepresents the output value (sensitivity) of the pixels according to theincident light.

In FIG. 21, the solid line graph is a graph showing the sensitivity ofthe photodiodes 214 in the phase difference detection pixels providedwith the light shield walls 304 for the light shield film 216-2indicated by the solid line in FIG. 20. In FIG. 21, the dashed linegraph is a graph showing the sensitivity of the photodiodes 214 in thephase difference detection pixels without the light shield walls 304 forthe light shield film 216-2′ indicated by the dashed line in FIG. 20.

FIG. 21 shows that the maximum value of sensitivity can be increased byproviding the light shield walls 304 without significantly changing theminimum value of sensitivity. In other words, providing the light shieldwalls 304 for the phase difference detection pixels can increase onlyhigher outputs while maintain lower outputs in the acceptance angledistribution.

The phase difference detection pixels from which lower outputs aremaintained and higher outputs are increased in the acceptance angledistribution functions as phase difference detection pixels having highresolution. In addition, formation of light shield walls on a lightshield film for the phase difference detection pixels does not changethe structure of the imaging pixels and thus does not affect theproperties of the image capturing pixels, enabling the above adjustmentof the properties of the phase difference detection pixels.

The shape and position of the light shield walls 304 are accordinglyinvolved in the adjustment of sensitivity and may be any shape andposition that provide a desired sensitivity.

Configuration of Focus Detecting Device According to Fifth Embodiment

FIG. 22 is a side sectional view of phase difference detection pixels ina focus detecting device according to a fifth embodiment. In the phasedifference detection pixels in the focus detecting device shown in FIG.22, the same reference numerals are given to the same parts as in thephase difference detection pixels in the focus detecting device shown inFIG. 20, and the description on the same parts is appropriately omitted.

In the phase difference detection pixels shown in FIG. 22, the lightshield walls 305 are provided on the lower surface of the light shieldfilm 216-2′. The light shield wall 305-1 is provided on the lowersurface of the light shield film 216-2′ closer to the photodiode 214-2,and the light shield wall 305-2 is provided on the lower surface of thelight shield film 216-2 closer to the photodiode 214-3.

The light shield walls 305-1 and 305-2 are located at the ends of thelight shield film 216-2′ and provided to have a predetermined verticalheight to the light shield film 216-2′. The light shield walls 305 areprovided next to the openings 230.

The description is continued here provided that the light shield walls305 are provided on the lower surface of the light shield film 216-2′,but the light shield walls 305 may be also provided on the light shieldfilm 216-1 and/or the light shield film 216-3.

The phase difference detection pixels shown in FIG. 22 have the sameconfiguration as the phase difference detection pixels shown in FIG. 20except that the light shield film 216-2 has a different length. Thelight shield film 216-2′ for the phase difference detection pixels shownin FIG. 22 is longer than the light shield film 216-2 shown in FIG. 20.In other words, the light shield film 216-2′ for the phase differencedetection pixels shown in FIG. 22 has the same length as the lightshield film 216-2 in FIG. 7.

In the phase difference detection pixels shown in FIG. 22, a large coverarea of the light shield film 216-2 results in small openings 230,providing the effects obtained by the small openings 230, for example,the effect of improving the resolution.

The acceptance angle distribution obtained from the phase differencedetection pixels having such a configuration is shown in FIG. 23. Theabscissa of the graph shown in FIG. 23 represents the angle of incidenceof light, and the ordinate represents the output value (sensitivity) ofthe pixels according to the incident light.

The solid line graph in FIG. 23 represents the sensitivity of thephotodiodes 214 in the phase difference detection pixels provided withthe light shield walls 305. The dashed line graph in FIG. 23 representsthe sensitivity of the photodiodes 214 in the phase difference detectionpixels with no light shield wall 305.

FIG. 23 shows that the minimum value of sensitivity can be decreased byproviding the light shield walls 305 without significantly changing themaximum value of sensitivity. In other words, providing the light shieldwalls 305 for the phase difference detection pixels without changing thelength of the light shield film 216 can decrease only lower outputswhile maintaining higher outputs in the acceptance angle distribution.This can improve the resolution as phase difference detection pixels.

In this way, the incident light can be controlled by the light shieldwalls 305 for higher outputs in the acceptance angle distribution, andthe incident light can be controlled by the light shield film 216 forlower outputs. This allows individual control of higher outputs andlower outputs of sensitivity. In addition, formation of light shieldwalls on a light shield film for the phase difference detection pixelsdoes not change the structure of the imaging pixels and thus does notaffect the properties of the image capturing pixels, enabling the aboveadjustment of the properties of the phase difference detection pixels.

Configuration of Focus Detecting Device According to Sixth Embodiment

FIG. 24 is a side sectional view of phase difference detection pixels ina focus detecting device according to a sixth embodiment. In the phasedifference detection pixels in the focus detecting device shown in FIG.24, the same reference numerals are given to the same parts as in thephase difference detection pixels in the focus detecting device shown inFIG. 20, and the description on the same parts is appropriately omitted.

The phase difference detection pixels shown in FIG. 24 have the sameconfiguration as the phase difference detection pixels shown in FIG. 20except that the light shield walls 306 have a different height. That is,the phase difference detection pixels shown in FIG. 24 have the lightshield walls 306 on the lower surface of the light shield film 216-2 inthe same manner as the phase difference detection pixels shown in FIG.20. The light shield wall 306-1 is provided on the lower surface of thelight shield film 216-2 closer to the photodiode 214-2, and the lightshield wall 306-2 is provided on the lower surface of the light shieldfilm 216-2 closer to the photodiode 214-3.

The light shield walls 306-1 and 306-2 are located at the ends of thelight shield film 216-2 and provided to have a predetermined verticalheight to the light shield film 216-2. The light shield walls 303-1 and303-2 are higher than the light shield walls 304 shown in FIG. 20. Thelight shield walls 306 are provided next to the openings 230.

The description is continued here provided that the light shield walls306 are provided on the lower surface of the light shield film 216-2,but the light shield walls 306 may be also provided on the light shieldfilm 216-1 and/or the light shield film 216-3.

In this way, in the phase difference detection pixels shown in FIG. 24,the light shield film 216-2 is shorter than the light shield film 216-2′known in the art, and the light shield walls 306 having a predeterminedheight are provided at the ends of the surface of the light shield film216-2 facing the photodiodes 214.

In the phase difference detection pixels shown in FIG. 24, a small coverarea of the light shield film 216-2 results in large openings 230,providing the effects obtained by the large openings 230. Providing thelight shield walls 306 on the lower surface of the light shield film216-2 and increasing the height of the light shield walls 303 can givethe same advantages as when the cover area is large like the lightshield film 216-2′.

This is shown as a graph in FIG. 25. The abscissa of the graph shown inFIG. 25 represents the angle of incidence of light, and the ordinaterepresents the output value (sensitivity) of the pixels according to theincident light.

In FIG. 25, the solid line graph is a graph showing the sensitivity ofthe photodiodes 214 in the phase difference detection pixels providedwith the light shield walls 306 for the light shield film 216-2indicated by the solid line in FIG. 24. In FIG. 25, the dashed linegraph is a graph showing the sensitivity of the photodiodes 214 in thephase difference detection pixels without the light shield walls 306 forthe light shield film 216-2′ indicated by the dashed line in FIG. 24.

FIG. 25 shows that providing the light shield walls 306 can increase themaximum value of sensitivity and decrease the minimum value. In otherwords, providing the light shield walls 306 for the phase differencedetection pixels can increase higher outputs and decrease lower outputsin the acceptance angle distribution. Such properties can provide phasedifference detection pixels having improved resolution. In addition,formation of light shield walls on a light shield film for the phasedifference detection pixels does not change the structure of the imagingpixels and thus does not affect the properties of the image capturingpixels, enabling the above adjustment of the properties of the phasedifference detection pixels.

As described above, higher outputs and lower outputs in the acceptanceangle distribution can be controlled to obtain desired outputs byadjusting the length of the light shield film 216 (the cover area of thelight shield film 216 over the photodiodes 214), providing the lightshield walls 304 to 306 on the surface of the light shield film 216facing the photodiodes 214 and adjusting the height of the light shieldwalls 304 to 306.

Configuration of Focus Detecting Device According to Seventh Embodiment

FIG. 26 is a side sectional view of phase difference detection pixels ina focus detecting device according to a seventh embodiment. In the phasedifference detection pixels in the focus detecting device shown in FIG.26, the same reference numerals are given to the same parts as in thephase difference detection pixels in the focus detecting device shown inFIGS. 16 and 22, and the description on the same parts is appropriatelyomitted.

The phase difference detection pixels shown in FIG. 26 have the sameconfiguration as the phase difference detection pixels shown in FIG. 16or 22 except that light shield walls are provided on the upper and lowersurfaces of the light shield film 216-2. That is, the phase differencedetection pixels shown in FIG. 26 include light shield walls 307 on theupper surface of the light shield film 216-2 facing the microlenses 220in the same manner as in the phase difference detection pixels shown inFIG. 16 and include light shield walls 308 on the lower surface of thelight shield film 216-2 facing the photodiodes 214.

A light shield wall 307-1 is provided on the upper surface of the lightshield film 216-2 facing the microlens 220-2, and a light shield wall307-2 is provided on the upper surface of the light shield film 216-2facing the microlens 220-3. A light shield wall 308-1 is provided on thelower surface of the light shield film 216-2 closer to the photodiode214-2, and a light shield wall 308-2 is provided on the lower surface ofthe light shield film 216-2 closer to the photodiode 214-3.

The light shield walls 307-1 and 307-2 are located at the ends of thelight shield film 216-2 and provided to have a predetermined verticalheight to the light shield film 216-2. The light shield walls 308-1 and308-2 are also located at the ends of the light shield film 216-2 andprovided to have a predetermined vertical height to the light shieldfilm 216-2.

The description is continued here provided that the light shield walls307 and 308 are provided on the light shield film 216-2, but the lightshield walls 307 and 308 may be also provided on the light shield film216-1 and/or the light shield film 216-3.

In the phase difference detection pixels shown in FIG. 26, the lightshield walls 307 and 308 are provided on the upper and lower surfaces ofthe light shield film 216-2, respectively.

The acceptance angle distribution for the phase difference detectionpixel having such a configuration is shown in FIG. 27. The abscissa ofthe graph shown in FIG. 27 represents the angle of incidence of light,and the ordinate represents the output value (sensitivity) of the pixelsaccording to the incident light.

The solid line graph in FIG. 27 represents the sensitivity of thephotodiodes 214 in the phase difference detection pixels provided withthe light shield walls 307 and 308 shown in FIG. 26. The dashed linegraph in FIG. 27 represents the sensitivity of the photodiodes 214 inthe phase difference detection pixels with no light shield wall 307 or308.

FIG. 27 shows that providing the light shield walls 307 and 308 candecrease the maximum value of sensitivity and decrease the minimum valueof sensitivity. In other words, providing the light shield walls 307 and308 for the phase difference detection pixels can decrease both higheroutputs and lower outputs in the acceptance angle distribution.

As shown in FIG. 26, the light shield walls can be provided on the upperand lower surfaces of the light shield film, respectively. Such aconfiguration can provide the features as shown in FIG. 27 and allowsadjust higher and lower outputs in the acceptance angle distribution tobe adjusted so as to obtain desired outputs. In addition, formation oflight shield walls on a light shield film for the phase differencedetection pixels does not change the structure of the imaging pixels andthus does not affect the properties of the image capturing pixels,enabling the above adjustment of the properties of the phase differencedetection pixels.

Although FIG. 26 illustrates an example in which the light shield walls307 and 308 are aligned on the light shield film 216, the light shieldwalls 307 and 308 may be disposed in different positions on the lightshield film 216.

The light shield film 216-2 may be shortened (the cover area over thephotodiodes 214 may be reduced).

Configuration of Focus Detecting Device According to Eighth Embodiment

The first to seventh embodiments illustrate examples in which lightshield walls are provided vertically to the light shield film 216. Aneighth embodiment describes that higher and lower outputs in theacceptance angle distribution can be controlled by a light shield filmprovided in parallel to the light shield film 216 to obtain desiredoutputs similarly to the first to seventh embodiments.

FIG. 28 is a diagram illustrating the configuration of phase differencedetection pixels according to an eighth embodiment. In the phasedifference detection pixels shown in FIG. 28, the same referencenumerals are given to the same parts as in the phase differencedetection pixels shown in FIG. 26, and the description on the same partsis omitted.

In the phase difference detection pixels shown in FIG. 28, a lightshield film 309-1 is provided between the light shield film 216-1 andthe microlens 220-2, wherein the light shield film 309-1 is in parallelwith the light shield film 216-1. Similarly, a light shield film 309-2is provided between the light shield film 216-2 and the microlenses220-2 and 220-3, wherein the light shield film 309-2 is in parallel withthe light shield film 216-2. Similarly, a light shield film 309-3 isprovided between the light shield film 216-3 and the microlens 220-3,wherein the light shield film 309-3 is in parallel with the light shieldfilm 216-3.

In the phase difference detection pixels shown in FIG. 28, the lightshield films 216-1 and 309-1 have the same length. The light shieldfilms 216-3 and 309-3 also have the same length. Unlike these films, thelight shield films 216-2 and 309-2 have a different length.

When two light shield films are provided in this way, higher outputs inthe acceptance angle distribution can be controlled by the light shieldfilm 309 closer to the microlenses 220, and lower outputs in theacceptance angle distribution can be controlled by the light shield film216 closer to the photodiodes 214.

In this way, higher outputs and lower outputs in the acceptance angledistribution can be controlled individually by adjusting the cover areaof the light shield films 216 and 309.

In the example shown in FIG. 28, the length (cover area) of the lightshield film 309-2 is shorter (smaller) than the length (cover area) ofthe light shield film 216-2. The acceptance angle distribution for thephase difference detection having two films thus formed is shown in FIG.29. The abscissa of the graph shown in FIG. 29 represents the angle ofincidence of light, and the ordinate represents the output value(sensitivity) of the pixels according to the incident light.

The solid line graph in FIG. 29 represents the sensitivity of thephotodiodes 214 in the phase difference detection pixels havingtwo-layered light shield films shown in FIG. 28. The dashed line graphin FIG. 29 represents the sensitivity of the photodiodes 214 in thephase difference detection pixels having single-layered light shieldfilms.

FIG. 29 shows that the maximum value of sensitivity can be maintainedand the minimum value of sensitivity can be decreased by providingtwo-layered light shield films. In other words, providing two-layeredlight shield walls for the phase difference detection pixels candecrease lower outputs while maintaining higher outputs in theacceptance angle distribution.

As described above, higher outputs and lower outputs in the acceptanceangle distribution can be controlled to obtain desired outputs byadjusting the length (cover area) of two-layered light shield films. Inaddition, formation of multiple light shield walls on a light shieldfilm for the phase difference detection pixels does not change thestructure of the imaging pixels and thus does not affect the propertiesof the image capturing pixels, enabling the above adjustment of theproperties of the phase difference detection pixels.

Although FIG. 28 illustrates an example of the phase differencedetection pixels having two-layered light shield films, light shieldfilms are not limited to two-layered light shield films, and may bethree-layered or multi-layered light shield films.

The present technology accordingly allows individual control of higheroutputs and lower outputs of sensitivity in the acceptance angledistribution without changing the properties of the imaging pixels

For example, lower outputs alone can be increased while higher outputsare maintained in the acceptance angle distribution of the phasedifference detection pixels without varying the properties of theimaging pixels, and the phase difference detection pixels can be alsoused as imaging pixels while maintaining some phase difference detectionproperties.

When only lower outputs are further decreased while higher outputs aremaintained in the acceptance angle distribution of the phase differencedetection pixels without varying the properties of the imaging pixels,phase difference detection properties can be improved.

Application Examples

Application examples of a focus detecting device including the abovephase difference detection pixels will be described below. Thesolid-state image sensor 22 in the above embodiments can be applied toelectronic devices in various fields. In addition to the imaging device(camera) shown in FIG. 1, an endoscope camera and a vision tip(artificial retina) will be described here as examples.

FIG. 30 is a functional block diagram illustrating the entireconfiguration of an endoscope camera (capsule-type endoscope camera400A) according to an application example. The capsule-type endoscopecamera 400A includes an optical system 410, a shutter device 420, asolid-state image sensor 22, a drive circuit 440, a signal processingcircuit 430, a data transmission unit 450, a driving battery 460, and anattitude (direction, angle)-sensing gyroscope circuit 470.

The optical system 410 includes one or more imaging lenses that allowimage light (incident light) reflected from a subject to form an imageon the imaging surface of the solid-state image sensor 22. The shutterdevice 420 controls the light irradiation period (exposure period) andthe light shielding period for the solid-state image sensor 22. Thedrive circuit 440 drives opening and closing of the shutter device 420and also drives the exposure operation and signal read operation in thesolid-state image sensor 22.

The signal processing circuit 430 performs various types of correctionprocessing, such as given signal processing (e.g., demosaicing, whitebalance adjustment) on output signals from the solid-state image sensor22.

The optical system 410 desirably enables multi-directional (e.g.,omnidirectional) imaging in four-dimensional space and includes one ormore lenses. It is noted that, in this example, picture signals D1 aftersignal processing in the signal processing circuit 430 andattitude-sensing signals D2 outputted from the gyroscope circuit 470 arewirelessly transmitted to an external device through the datatransmission unit 450.

Endoscope cameras that can employ the image sensors according to theabove embodiments are not limited to the capsule type as described aboveand may be, for example, the insert-type endoscope camera (insert-typeendoscope camera 400B) as shown in FIG. 31.

The insert-type endoscope camera 400B includes an optical system 410, ashutter device 420, a solid-state image sensor 22, a drive circuit 440,a signal processing circuit 430, and a data transmission unit 450, whichare the same as some of the components in the capsule-type endoscopecamera 400A. It is noted that the insert-type endoscope camera 400Bfurther includes an arm 480 a retractable within the device and a driveunit 480 configured to drive the arm 480 a. The insert-type endoscopecamera 400B is connected to a cable 490 having wiring 490A configured totransmit arm control signals CTL to the drive unit 480, and wiring 490Bconfigured to transmit picture signals D_(out) based on image shots.

FIG. 32 is a functional block diagram illustrating the entireconfiguration of a vision chip (vision tip 500) according to anotherapplication example. The vision chip 500 is an artificial retinaimplantable in a part of the back wall of an eyeball E1 of the eye(retina E2 having the optic nerve) for use. The vision chip 500 isimplanted, for example, in a part of any of ganglion cells C1,horizontal cells C2, and visual cells C3 in the retina E2. The visionchip 500 includes, for example, a solid-state image sensor 22, a signalprocessing circuit 510, and a stimulating electrode unit 520.

The vision chip 500 with such a configuration involves acquiringelectric signals based on light incident on the eye in the solid-stateimage sensor 22, processing the electric signals in the signalprocessing circuit 510, and supplying predetermined control signals tothe stimulating electrode unit 520. The stimulating electrode unit 520has a function of providing the optic nerve with stimulation (electricsignals) according to the inputted control signals.

As used herein, the system refers to the entire device includingmultiple devices.

The advantages described herein are illustrative only and should not beconstrued as restrictive, and other advantages may be provided.

The embodiments according to the present technology are not limited tothe embodiments described above and various modifications can be madewithout departing from the spirit of the present technology.

Additionally, the present technology may also be configured as below.

(1)

A focus detecting device including:

a microlens;

a photoreceptor configured to receive light entering through themicrolens;

a light shield film provided between the microlens and the photoreceptorand configured to limit an amount of light on the photoreceptor; and

a light shield wall provided vertical to the light shield film.

(2)

A focus detecting device according to (1), wherein the light shield wallis provided at an opening of the light shield film.

(3)

The focus detecting device according to (1) or (2), wherein the lightshield wall is provided on a surface of the light shield film facing themicrolens.

(4)

The focus detecting device according to (1) or (2), wherein the lightshield wall is provided on a surface of the light shield film facing thephotoreceptor.

(5)

The focus detecting device according to (1) or (2), wherein the lightshield walls are provided on both surfaces of the light shield filmfacing the microlens and the photoreceptor.

(6)

The focus detecting device according to (1) or (2), wherein a cover areaof the light shield film over the photoreceptor is reduced and the lightshield wall having a predetermined height is provided on a surface ofthe light shield film facing the microlens to maintain a maximum valueof sensitivity of the photoreceptor obtained when the focus detectingdevice includes the light shield film without the light shield wall, andto increase a minimum value of the sensitivity.

(7)

The focus detecting device according to (1) or (2), wherein the lightshield wall having a predetermined height is provided on a surface ofthe light shield film facing the microlens to maintain a minimum valueof sensitivity of the photoreceptor obtained when the focus detectingdevice includes the light shield film without the light shield wall, andto decrease a maximum value of the sensitivity.

(8)

The focus detecting device according to (1) or (2), wherein a cover areaof the light shield film over the photoreceptor is reduced and the lightshield wall having a predetermined height is provided on a surface ofthe light shield film facing the microlens to decrease a maximum valueof sensitivity of the photoreceptor obtained when the focus detectingdevice includes the light shield film without the light shield wall, andto increase a minimum value of the sensitivity.

(9)

The focus detecting device according to (1) or (2), wherein a cover areaof the light shield film over the photoreceptor is reduced and the lightshield wall having a predetermined height is provided on a surface ofthe light shield film facing the photoreceptor to maintain a minimumvalue of sensitivity of the photoreceptor obtained when the focusdetecting device includes the light shield film without the light shieldwall, and to increase a maximum value of the sensitivity.

(10)

The focus detecting device according to (1) or (2), wherein the lightshield wall having a predetermined height is provided on a surface ofthe light shield film facing the photoreceptor to maintain a maximumvalue of sensitivity of the photoreceptor obtained when the focusdetecting device includes the light shield film without the light shieldwall, and to increase a minimum value of the sensitivity.

(11)

The focus detecting device according to (1) or (2), wherein a cover areaof the light shield film over the photoreceptor is reduced and the lightshield wall having a predetermined height is provided on a surface ofthe light shield film facing the photoreceptor to increase a maximumvalue of sensitivity of the photoreceptor obtained when the focusdetecting device includes the light shield film without the light shieldwall, and to decrease a minimum value of the sensitivity.

(12)

The focus detecting device according to (1) or (2), wherein the lightshield walls having a predetermined height are provided on both surfacesof the light shield film facing the microlens and the photoreceptor todecrease a maximum value of sensitivity of the photoreceptor obtainedwhen the focus detecting device includes the light shield film withoutthe light shield wall, and to decrease a minimum value of thesensitivity.

(13)

A focus detecting device including:

a microlens;

a photoreceptor configured to receive light entering through themicrolens; and

a plurality of light shield films provided between the microlens and thephotoreceptor and configured to limit an amount of light on thephotoreceptor.

(14)

The focus detecting device according to (13), wherein a cover area of alight shield film closer to the microlens, of the plurality of lightshield curtains, over the photoreceptor is made smaller than a coverarea of a light shield film closer to the photoreceptor over thephotoreceptor to maintain a maximum value of sensitivity of thephotoreceptor obtained when the light shield films are single-layered,and to increase a minimum value of the sensitivity.

(15)

An electronic device including:

a microlens;

a photoreceptor configured to receive light entering through themicrolens;

a light shield film provided between the microlens and the photoreceptorand configured to limit an amount of light on the photoreceptor;

a light shield wall provided vertical to the light shield film;

a detector configured to detect a focus using a signal from thephotoreceptor; and

a signal processing unit configured to process a signal outputted fromthe photoreceptor without the light shield film.

(16)

A focus detecting device including:

a lens array including a plurality of lenses;

a photoreceptor including a plurality of light-receiving pixels; and

a light shield unit provided between the lens array and thephotoreceptor in a first direction,

wherein

the lens array includes a first lens and a second lens,

the photoreceptor includes a first light-receiving pixel opposite to thefirst lens and a second light-receiving pixel opposite to the secondlens, and

the light shield unit includes a first protrusion region that overlapsthe first lens and protrudes in the first direction and a secondprotrusion region that overlaps the second lens and protrudes in thefirst direction.

(17)

The focus detecting device according to (16), wherein

the light shield unit includes

-   -   a light shield film that overlaps the first lens and the second        lens,    -   a first light shield wall that extends in the first direction in        the first protrusion region, and    -   a second light shield wall that extends in the first direction        in the second protrusion region.        (18)

The focus detecting device according to (16) or (17), wherein the firstlight shield wall and the second light shield wall are thicker than thelight shield film in the first direction.

REFERENCE SIGNS LIST

-   214 photodiode-   216 light shield film-   220 microlens-   230 opening-   301, 302, 303, 304, 305, 306, 307, 308 light shield wall-   309 light shield film

What is claimed is: 1-18. (canceled)
 19. A light detecting devicecomprising: a first microlens; a second microlens adjacent to the firstmicrolens; a first photoelectric conversion region configured to receivelight through the first microlens; a second photoelectric conversionregion adjacent to the first photoelectric conversion region andconfigured to receive light through the second microlens; and aplurality of light shield films disposed between the first and secondmicrolenses and the first and second photoelectric conversion regions,wherein: a cover area of a light shield film of the plurality of lightshield films disposed closer to the first and second microlenses issmaller than a cover area of a light shield film of the plurality oflight shield films disposed closer to the first and second photoelectricconversion regions, and each of the plurality of light shields overlapsat least a part of the first photoelectric conversion region and atleast a part of the second photoelectric conversion region.
 20. Thelight detecting device of claim 19, wherein at least a first lightshield film of the plurality of light shield films is configured tolimit an amount of light on the first photoelectric conversion region.21. The light detecting device of claim 20, wherein at least a secondlight shield film is configured to limit an amount of light on thesecond photoelectric conversion region.
 22. The light detecting deviceof claim 19, wherein the cover area of the light shield film disposedcloser to the first and second photoelectric conversion regionsmaintains a maximum value of sensitivity and a maximum value ofsensitivity of the first and second photoreceptors.
 23. The lightdetecting device of claim 19, wherein each of the plurality of lightshield films are single-layered.
 24. The light detecting device of claim19, wherein the light detecting device is configured to detect a phasedifference.
 25. The light detecting device of claim 19, wherein thecover area of the light shield film disposed closer to the first andsecond microlenses and the cover area of the light shield film disposedcloser to the first and second photoelectric conversion regions affectsan acceptance angle distribution for each of the first and secondphotoelectric conversion regions.
 26. The light detecting device ofclaim 19, wherein a first portion of each of the plurality of lightshields blocks light from the first microlens from reaching the firstphotoelectric conversion region.
 27. The light detecting device of claim26, wherein a second portion of each of the plurality of light shieldsblocks light from the second microlens from reaching the secondphotoelectric conversion region.
 28. The light detecting device of claim19, wherein the light shield film disposed closer to the first andsecond microlenses is centered over the light shield film disposedcloser to the first and second photoelectric conversion regions.
 29. Anelectronic device comprising: an imaging lens; a signal processingcircuit; and a light detecting device comprising: a first microlens; asecond microlens adjacent to the first microlens; a first photoelectricconversion region configured to receive light through the firstmicrolens; a second photoelectric conversion region adjacent to thefirst photoelectric conversion region and configured to receive lightthrough the second microlens; and a plurality of light shield filmsdisposed between the first and second microlenses and the first andsecond photoelectric conversion regions, wherein: a cover area of alight shield film disposed closer to the first and second microlenses ofthe plurality of light shield films is smaller than a cover area of alight shield film disposed closer to the first and second photoelectricconversion regions, and each of the plurality of light shields overlapsat least a part of the first photoelectric conversion region and atleast a part of the second photoelectric conversion region.
 30. Theelectronic device of claim 29, wherein at least a first light shieldfilm of the plurality of light shield films is configured to limit anamount of light on the first photoelectric conversion region.
 31. Theelectronic device of claim 30, wherein at least a second light shieldfilm is configured to limit an amount of light on the secondphotoelectric conversion region.
 32. The electronic device of claim 29,wherein the cover area of the light shield film disposed closer to thefirst and second photoelectric conversion regions maintains a maximumvalue of sensitivity and a maximum value of sensitivity of the first andsecond photoreceptors.
 33. The electronic device of claim 29, whereineach of the plurality of light shield films are single-layered.
 34. Theelectronic device of claim 29, wherein the light detecting device isconfigured to detect a phase difference.
 35. The electronic device ofclaim 29, wherein the cover area of the light shield film disposedcloser to the first and second microlenses and the cover area of thelight shield film disposed closer to the first and second photoelectricconversion regions affects an acceptance angle distribution for each ofthe first and second photoelectric conversion regions.
 36. Theelectronic device of claim 29, wherein a first portion of each of theplurality of light shields blocks light from the first microlens fromreaching the first photoelectric conversion region.
 37. The electronicdevice of claim 36, wherein a second portion of each of the plurality oflight shields blocks light from the second microlens from reaching thesecond photoelectric conversion region.
 38. The electronic device ofclaim 29, wherein the light shield film disposed closer to the first andsecond microlenses is centered over the light shield film disposedcloser to the first and second photoelectric conversion regions.